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NanoFab Tool: Plasma Therm Corial ICP HBr Cl Etcher

Plasma Therm Corial ICP HBr Cl Etcher

The Plasma Therm Corial ICP HBr Cl etcher is an inductively coupled plasma (ICP) reactive ion etching system. The high-power plasma source combined with low vacuum operating pressure provides users with smooth anisotropic Silicon etch depths ranging from several micrometers to a few nanometers. The system can accommodate substrates ranging from 150 mm diameter wafers down to small pieces.

Specifications/Capabilities

  • Inductively coupled plasma (ICP) power source: up to 2000 W.
  • Radio Frequency (RF) power source: up to 600 W.
  • Process gases: Ar, BCl3, Cl2, O2, HBr, He, N2 and SF6
  • Anisotropic etching of Silicon.

Usage Information

Supported Sample Sizes

  • Maximum wafer diameter: 150 mm.
  • Small pieces supported: Yes.

Typical Applications

  • Small and shallow silicon structure etching.
Created December 18, 2024, Updated December 19, 2024