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NanoFab Tool: Oxford PlasmaPro 100 Inductively Coupled Plasma (ICP) Dielectric Etcher

Oxford Dielectric Etcher

Photograph of the Oxford PlasmaPro 100 Inductively Coupled Plasma (ICP) Dielectric Etcher.

The Oxford PlasmaPro100 ICP dielectric etcher is a system that allows anisotropic etching of silicon oxide and silicon nitride. The tool is equipped with multiple etch gases and a temperature-controlled electrode. The manual wafer load system can accommodate substrates ranging from 200 mm diameter wafers down to small pieces.

Specifications/Capabilities

  • The Cobra ICP etch sources produce a high density of reactive species at low pressure.
  • Full area process gas inlet showerhead for uniform gas distribution.
  • Electrode temperature range: -150 °C to +400 °C.
  • Wafer clamping with Helium backside cooling.
  • Process gases: Ar; N2; O2; He; CH4; CHF3; CF4; C4F8; C2F6; SF6
  • Controlled profile etching.
  • Wafer diameters: 75 mm, 100 mm (default), 150 mm, and 200 mm.
  • Small pieces supported: Yes.

Typical Applications

  • SiO2 and Si3N4 based device fabrication.
Created October 8, 2021, Updated March 29, 2022