The Oxford PlasmaPro100 ICP dielectric etcher is a system that allows anisotropic etching of silicon oxide and silicon nitride. The tool is equipped with multiple etch gases and a temperature-controlled electrode. The manual wafer load system can accommodate substrates ranging from 200 mm diameter wafers down to small pieces.
The Cobra ICP etch sources produce a high density of reactive species at low pressure.
Full area process gas inlet showerhead for uniform gas distribution.