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NanoFab Tool: Oxford Plasmalab 100 Inductively Coupled Plasma (ICP) Etcher 1

Photograph of the Oxford Plasmalab 100 inductively coupled plasma etcher.
Photograph of the Oxford Plasmalab 100 inductively coupled plasma etcher.

The Oxford Plasmalab 100 inductively coupled plasma (ICP) etcher is a multipurpose chlorine based system that provides users with selective etching of III-V group semiconductors as well as metals. The tool is equipped with a temperature controlled electrode to help users tailor their etch feature profiles. The manual load system can accommodate substrates ranging from 200 mm diameter wafers down to small pieces.

Specifications/Capabilities

  • Inductively coupled plasma (ICP) power source: up to 2500 W at 2.4 MHz.
  • Radio frequency (RF) power source: up to 600 W at 13.56 MHz.
  • Electrode temperature range: -150 °C to 300 °C.
  • Unique process gases: chlorine, boron trichloride, hydrogen bromide, silicon tetrachloride, methane, and hydrogen.
  • Controlled etching of Al, Al2O3, Cr, Cr2O3, Mo and Ti.

Usage Information

Supported Sample Sizes

  • Maximum wafer diameter: 200 mm (8 in).
  • Wafer diameters: 75 mm (3 in), 100 mm (4 in) - default, 150 mm (6 in), and 200 mm (8 in).
  • Small pieces supported: Yes.

Typical Applications

  • Optical device fabrication.
  • General device patterning.
Created June 22, 2014, Updated July 9, 2019