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NanoFab Tool: Oxford Plasmalab 100 Inductively Coupled Plasma (ICP) Metal Etcher

Photograph of the Oxford Plasmalab 100 inductively coupled plasma etcher.
Photograph of the Oxford Plasmalab 100 inductively coupled plasma etcher.

The Oxford Plasmalab 100 inductively coupled plasma (ICP) etcher is a multipurpose chlorine based system that provides users with selective etching of III-V group semiconductors as well as metals. The tool is equipped with a temperature controlled electrode to help users tailor their etch feature profiles. The manual load system can accommodate substrates ranging from 200 mm diameter wafers down to small pieces.


  • Inductively coupled plasma (ICP) power source: up to 2500 W at 2.4 MHz.
  • Radio frequency (RF) power source: up to 600 W at 13.56 MHz.
  • Electrode temperature range: -150 °C to 300 °C.
  • Process Gases: Ar, He, N2, O2, BCl3, CF4, CH4, Cl2, H2, HBr, SF6 and SiCl4
  • Controlled etching of Al, Al2O3, Cr, Cr2O3, Mo and Ti.

Usage Information

Supported Sample Sizes

  • Maximum wafer diameter: 200 mm (8 in).
  • Wafer diameters: 75 mm (3 in), 100 mm (4 in) - default, 150 mm (6 in), and 200 mm (8 in).
  • Small pieces supported: Yes.

Typical Applications

  • Optical device fabrication.
  • General device patterning.
Created June 22, 2014, Updated October 6, 2023