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NanoFab Tool: Oxford Plasmalab 100 Inductively Coupled Plasma (ICP) Silicon Etcher

Photograph of the Oxford Plasmalab 100 inductively coupled plasma etcher.
Photograph of the Oxford Plasmalab 100 inductively coupled plasma etcher.

The Oxford Plasmalab 100 inductively coupled plasma (ICP) etcher is a multipurpose fluorocarbon based system that provides users anisotropic etching of silicon, silicon oxide, and other dielectric materials. The tool is equipped with a temperature controlled electrode to help users tailor their etch feature profiles. The manual load system can accommodate substrates ranging from 200 mm diameter wafers down to small pieces.


  • Inductively coupled plasma (ICP) power source: up to 2500 W at 2.4 MHz.
  • Radio frequency (RF) power source: up to 600 W at 13.56 MHz.
  • Electrode temperature range: -150 °C to 300 °C. 
  • Process Gases: Ar, He, N2, O2, H2, CF4, C2F6, C4F8, CHF3 and SF6
  • Anisotropic etching of silicon, silicon oxide and silicon nitride.
  • Low temperature silicon etching.

Usage Information

Supported Sample Sizes

  • Maximum wafer diameter: 200 mm (8 in).
  • Wafer diameters: 75 mm (3 in), 100 mm (4 in) - default, 150 mm (6 in), and 200 mm (8 in).
  • Small pieces supported: Yes.

Typical Applications

  • Silicon and silicon oxide stack etching.
  • Optical device fabrication.
  • General device patterning.
Created June 22, 2014, Updated October 6, 2023