The Oxford Plasmalab 100 inductively coupled plasma (ICP) etcher is a multipurpose fluorocarbon based system that provides users anisotropic etching of silicon, silicon oxide, and other dielectric materials. The tool is equipped with a temperature controlled electrode to help users tailor their etch feature profiles. The manual load system can accommodate substrates ranging from 200 mm diameter wafers down to small pieces.
Inductively coupled plasma (ICP) power source: up to 2500 W at 2.4 MHz.
Radio frequency (RF) power source: up to 600 W at 13.56 MHz.
Electrode temperature range: -150 °C to 300 °C.
Unique process gases: hexafluoroethane (C2F6), octafluorocyclobutane (C4F8), trifluormethane (CHF3), and hydrogen.
Anisotropic etching of silicon, silicon oxide and silicon nitride.
Low temperature silicon etching.
Supported Sample Sizes
Maximum wafer diameter: 200 mm (8 in).
Wafer diameters: 75 mm (3 in), 100 mm (4 in) - default, 150 mm (6 in), and 200 mm (8 in).