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NanoFab Tool: Oxford Plasmalab 100 Inductively Coupled Plasma (ICP) Etcher 2

Photograph of the Oxford Plasmalab 100 inductively coupled plasma etcher.
Photograph of the Oxford Plasmalab 100 inductively coupled plasma etcher.

The Oxford Plasmalab 100 inductively coupled plasma (ICP) etcher is a multipurpose fluorocarbon based system that provides users anisotropic etching of silicon, silicon oxide, and other dielectric materials. The tool is equipped with a temperature controlled electrode to help users tailor their etch feature profiles. The manual load system can accommodate substrates ranging from 200 mm diameter wafers down to small pieces.

Specifications/Capabilities

  • Inductively coupled plasma (ICP) power source: up to 2500 W at 2.4 MHz.
  • Radio frequency (RF) power source: up to 600 W at 13.56 MHz.
  • Electrode temperature range: -150 °C to 300 °C. 
  • Unique process gases: hexafluoroethane (C2F6), octafluorocyclobutane (C4F8), trifluormethane (CHF3), and hydrogen.
  • Anisotropic etching of silicon, silicon oxide and silicon nitride.
  • Low temperature silicon etching.

Usage Information

Supported Sample Sizes

  • Maximum wafer diameter: 200 mm (8 in).
  • Wafer diameters: 75 mm (3 in), 100 mm (4 in) - default, 150 mm (6 in), and 200 mm (8 in).
  • Small pieces supported: Yes.

Typical Applications

  • Silicon and silicon oxide stack etching.
  • Optical device fabrication.
  • General device patterning.
Created June 22, 2014, Updated December 4, 2019