The Four Dimensions CV92A mercury probe system provides non-destructive and rapid measurement of current-voltage and capacitance-voltage curves to derive resistivity, breakdown voltage/field and film thickness of thin dielectric films without having to metallize the wafer and fabricate capacitors, as is required by traditional probe stations. The capacitor top contact (”gate”) is simply formed by a mercury contact. The accuracy of the measurements is guaranteed by the precisely defined contact area. Other parameters such as doping density profiles, trap distribution, pinhole/defect density, charge/capacitance versus time, charge versus voltage and dielectric constant can be easily derived as well. The system has a user-friendly software that offers comprehensive maps of up to 200 points per wafer.