NanoFab Tool: IPEC 472, Chemical Mechanical Polisher (CMP)
The CMP removes material both chemically, by use of a corrosive colloidal slurry, and mechanically, by way of a wafer carrier under controlled pressure rotating against a rotating polishing pad, with carrier and pad having nonconcentric axes of rotation. It is equipped with a primary platen to remove the material and a secondary platen to do the final polish and minimize the surface roughness. The system removes irregular topography and leaves wafers planar with sub-nanometer roughness.
Sample sizes: 100 mm, 150 mm and 200 mm in diameter wafers (pieces are not allowed)
Cassette-to-cassette capability for 100 mm wafers
Manual loading, one wafer at a time, for 150 mm and 200 mm wafers
Laterally oscillating wafer carrier
In-situ pad conditioning on primary platen
Within wafer non-uniformity: typically, less than 3 % sigma/mean
Wafer-to-wafer non-uniformity: typically, less than 5 %
The removal rate is dependent on material, rotation speeds, pressure, type of slurry, concentration and slurry flow rate and can vary from a few nm/min to several hundred nm/min.
Planarization of metal interconnects and vias: typically, Cu, W, Al, Au, Pt
Planarization of inter-layer dielectrics: typically, SiO2
General sample polishing to minimize surface roughness