The FEI Helios 660 dual-beam microscope combines a monochromated field emission scanning electron microscope (FE-SEM) with an advanced focused ion beam (FIB) column for fast, precise nanomachining and nanoscale structural characterization. Enhanced capabilities include simultaneous chemical characterization using energy dispersive x-ray spectroscopy and material crystallographic characterization using electron backscatter diffraction. The tool supports a variety of substrates ranging from 150 mm diameter wafers down to small pieces.
- Resolution: sub-nanometer from 1 kV to 30 kV.
- High resolution triple in-lens electron detectors with Through Lens (TLD, secondary and backscatter mode), In Column (ICD, low-loss backscatter), and Mirror (MD, no-loss backscatter) detectors.
- Scanning transmission electron microscopy (STEM) detector with bright-field (BF), dark-field (DF), and high-angle annular dark-field (HAADF) segments.
- Electron beam deceleration for 50 V effective landing voltage.
- 5-axis stage with 150 mm X-Y range and full rotation.
- Integrated plasma cleaner to minimize contamination.
- FIB (Gallium ion source)
- Resolution: 2.5 nm at 30 kV.
- High current for fast milling of large areas.
- High efficiency secondary ion detector.
- Electron flood gun for ion charge compensation.
- Integrated beam current measurement to allow faster ion beam calibrations while samples are already in the chamber.
- Real time monitoring of milling and deposition processes.
- End point monitoring for cross sectioning and circuit editing applications.
- Oxford/Omniprobe 300 manipulator for removing transmission electron microscopy (TEM) samples.
- Enhanced capabilities for simultaneous chemical characterization using energy dispersive x-ray spectroscopy on an Oxford Instruments X-Max 80 mm2 SDD-EDS detector and material crystallographic characterization using electron backscatter diffraction on an Oxford Instruments NordlysMax2 EBSD detector.
- Gas injection system chemistries
- Platinum deposition.
- Carbon deposition.
- Insulator deposition using tetraethyl orthosilicate (TEOS).
- Selective carbon etch.
- Insulator enhanced etching using xenon difluoride (XeF2).
- Software packages
- Auto TEM – Automated TEM sample preparation before liftout.
- NanoBuilder – Advanced computer aided design (CAD) based patterning using GDSII files.
- Auto Slice and View – Automated sequential milling and image capturing generates datasets for 3D reconstruction.
- EBS3 – captures EBSD data during sequential milling.
- Aztec – User-friendly EDS/EBSD data collection and analysis software.
- Avizo Fire – 3D reconstruction software with additional tools for materials science applications.
Supported Sample Sizes
- Maximum wafer diameter: 150 mm (6 in).
- Holders for 100 mm, 125 mm, and 150 mm diameter wafers.
- Small pieces supported: Yes.
- Nanometer scale patterning.
- 3D tomography.
- Materials characterization.
- Prototyping of nanoscale devices.
- In situ electrical measurements.
- Preparation of TEM lamellae.
- Sample preparation for atom probe tomography.
- Failure analysis.
- Circuit editing.
- Analysis and mapping of material and chemical sample composition.
- Mapping of crystal orientation.
- Phase identification.
- Collection of grain boundary and localized strain data.
FEI FIB 2
Building 216 Rm. G113
Hours of Operation
Tool Reservation Rules
Tool Reservation Rules
- Minimum Reservation Time: 30 minutes.
- Maximum Reservation Time: 8 hours.
- Adjacent Reservations Permitted: Yes.
- Cancelation Policy: Reservations must be canceled at least 12 hours before the scheduled start time.
Hourly RateStandard Cost:
Depends on user experience and process requirements; typically 6 hours.
Created May 19, 2014, Updated October 19, 2018