NanoFab Tool: FEI Helios NanoLab 660 Dual Beam Scanning Electron Microscope (SEM) and Focused Ion Beam (FIB) - FIB1
The FEI Helios 660 dual-beam microscope combines a monochromated field emission scanning electron microscope (FE-SEM) with an advanced focused ion beam (FIB) column for fast, precise nanomachining and nanoscale structural characterization. Enhanced capabilities include nanoscale positioning and in situ electrical measurements using a Kleindiek four-probe system with rotating grippers and a dedicated low-noise vacuum feedthrough to take electrical signals from the substrate to a parametric tester located outside of the vacuum chamber. The tool supports a variety of substrates ranging from 150 mm diameter wafers down to small pieces.
Resolution: sub-nanometer from 1 kV to 30 kV.
High resolution triple in-lens electron detectors with Through Lens (TLD, secondary and backscatter mode), In Column (ICD, low-loss backscatter), and Mirror (MD, no-loss backscatter) detectors.
Scanning transmission electron microscopy (STEM) detector with bright-field (BF), dark-field (DF), and high-angle annular dark-field (HAADF) segments.
Electron beam deceleration for 50 V effective landing voltage.
5-axis stage with 150 mm X-Y range and full rotation.
Integrated plasma cleaner to minimize contamination.
FIB (Gallium ion source)
Resolution: 2.5 nm at 30 kV.
High current for fast milling of large areas.
High efficiency secondary ion detector.
Electron flood gun for ion charge compensation.
Integrated beam current measurement to allow faster ion beam calibrations while samples are already in the chamber.
Real time monitoring of milling and deposition process.
End point monitoring for cross sectioning and circuit editing applications.
Oxford/Omniprobe 300 manipulator for removing transmission electron microscopy (TEM) samples.
Enhanced capabilities for nanoscale positioning and in situ electrical measurements using a Kleindiek four-probe system with rotating grippers and dedicated low-noise vacuum feed through to take electrical signals from the substrate to a parametric tester located outside of the vacuum chamber.
Gas injection system chemistries
Insulator deposition using tetraethyl orthosilicate (TEOS).
Selective carbon etching.
Insulator enhanced etching using xenon difluoride (XeF2).
Auto TEM – Automated TEM sample preparation before liftout.
NanoBuilder – Advanced computer aided design (CAD) based patterning using GDSII files.
Auto Slice and View – Automated sequential milling and image capture generates datasets for 3D reconstruction.
EBS3 – captures EBSD data during sequential milling.
Aztec – User-friendly EDS/EBSD data collection and analysis software.
Avizo Fire – 3D reconstruction software with additional tools for materials science applications.
Supported Sample Sizes
Maximum wafer diameter: 150 mm (6 in).
Holders for 100 mm, 125 mm, and 150 mm diameter wafers.