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NanoFab Tool: AnnealSys RTA
Photo of AnnealSys model AS-Master
The AnnealSys model AS-Master is a single wafer rapid thermal process system supports anneal processing in the NanoFab cleanroom. This tools supports anneals under several gas flows and below atmosphere pressure. This will provide an automated single-wafer annealing process for implant and ohmic contact annealing, rapid thermal oxidation, and general densification annealing. This system can accommodate small chips and substrates ranging from 75 mm diameter wafers up to 200 mm diameter wafers. In addition, the tool is capable of high temperature anneals up to 1500 °C.
Specifications/Capabilities
- Computer controlled recipe processing
- Maximum temperature: 1500 °C
- Maximum ramp rate: 200 °C / s
- Maximum soak time: 2 min @ 1500 °C; 120 min @ T< 1000 °C
- Anneal gases available:
- Nitrogen
- Oxygen
- Argon
- 10 % forming gas
- Vacuum range: Atmosphere to 5E-3 Tor
Usage Information
Supported Sample Sizes
- Wafer diameter supported: 75 mm (3 inch), 100 mm (4 inch), 150 mm (6 inch), 200 mm (8 inch)
- Small pieces supported: Yes
Recommended Substrates/Restricted Materials
- Silicon, SiO2, and SiN only in chamber
- All other materials should use a susceptor
Typical Applications
- Growth of thin silicon dioxide.
- Dopant activation after ion implantation.
- Reflowing of chemical vapor deposited glass.
- Metal sintering.