McKeown, D.
(1991),
XANES of Transition Metal Zinc-Blende Semiconductors, X-ray Absorption Fine Structure, Proc., Sixth International Conference on X-ray Absorption Fine Structures, York, 1, UK
(Accessed May 10, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
XANES of Transition Metal Zinc-Blende Semiconductors, X-ray Absorption Fine Structure
Published
Author(s)
D. A. McKeown
Proceedings Title
Proc., Sixth International Conference on X-ray Absorption Fine Structures
Conference Dates
August 5-11, 1990
Conference Location
York, 1, UK
Pub Type
Conferences
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created December 30, 1991, Updated October 12, 2021