Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

X-Ray Reflectivity Porosimetry for the Characterization of Porous Low-K Dielectric Constant Thin Films

Published

Author(s)

Christopher Soles, V. J. Lee, R C. Hedden, D W. Liu, Barry J. Bauer, Wen-Li Wu

Abstract

X-ray reflectivity porosimetry is a highly sensitive measurement method used to quantify the capillary condensation of a solvent vapor inside porous low-k dielectric films on a silicon substrate. As the partial pressure of the solvent environment over the film increases, capillary condensation occurs in progressively larger pores. This results in an appreciable increase in the electron density of the film. By monitoring the changes in the critical angle for total X-ray reflectance, one can directly calculate the average electron density, and therefore the solvent uptake. By invoking traditional porosimetry absorption/desorption procedures, characteristics such as porosity and the distribution of pore sizes can be extracted.
Proceedings Title
Polymers for Microelectronics and Nanolectronics | |
Volume
25(1)
Conference Dates
August 1, 2002
Conference Location
Undefined
Conference Title
ACS Symposium Series

Keywords

Low-k kielectric, porosimetry, thin film, x-ray Reflectivity

Citation

Soles, C. , Lee, V. , Hedden, R. , Liu, D. , Bauer, B. and Wu, W. (2004), X-Ray Reflectivity Porosimetry for the Characterization of Porous Low-K Dielectric Constant Thin Films, Polymers for Microelectronics and Nanolectronics | |, Undefined, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=852163 (Accessed December 5, 2023)
Created March 31, 2004, Updated October 12, 2021