X-Ray Reflectivity Porosimetry for the Characterization of Porous Low-K Dielectric Constant Thin Films
Christopher Soles, V. J. Lee, R C. Hedden, D W. Liu, Barry J. Bauer, Wen-Li Wu
X-ray reflectivity porosimetry is a highly sensitive measurement method used to quantify the capillary condensation of a solvent vapor inside porous low-k dielectric films on a silicon substrate. As the partial pressure of the solvent environment over the film increases, capillary condensation occurs in progressively larger pores. This results in an appreciable increase in the electron density of the film. By monitoring the changes in the critical angle for total X-ray reflectance, one can directly calculate the average electron density, and therefore the solvent uptake. By invoking traditional porosimetry absorption/desorption procedures, characteristics such as porosity and the distribution of pore sizes can be extracted.
Polymers for Microelectronics and Nanolectronics | |
, Lee, V.
, Hedden, R.
, Liu, D.
, Bauer, B.
and Wu, W.
X-Ray Reflectivity Porosimetry for the Characterization of Porous Low-K Dielectric Constant Thin Films, Polymers for Microelectronics and Nanolectronics | |, Undefined, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=852163
(Accessed December 5, 2023)