On-Wafer Transistor Characterization to 750 GHz –the approach, results, and pitfalls

Published: October 15, 2018

Author(s)

Dylan F. Williams, Jerome G. Cheron, Benjamin F. Jamroz, Richard A. Chamberlin

Abstract

We review approaches developed at the National Institute of Standards and Technology for on-wafer transistor characterization and model extraction at sub-millimeter-wave wavelengths, and compare them to more common approaches developed for use at lower frequencies. We discuss important improvements in accuracy, approaches to estimating the uncertainty of the procedure, and recent research on further improving these methods.
Proceedings Title: BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium Digest
Conference Dates: October 14-17, 2018
Conference Location: San Diego, CA
Conference Title: BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium
Pub Type: Conferences

Download Paper

Keywords

Vector-network-analyzer calibration, on-wafer measurements, scattering parameters, sub-millimeter-wave, transistor, uncertainty
Created October 15, 2018, Updated March 19, 2019