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Vapor Phase Metal-assisted Chemical Etching of Silicon

Published

Author(s)

Owen J. Hildreth, Daniel R. Schmidt

Abstract

This work introduces and explores Vapor Phase Metal-assisted Chemical Etching (VP-MaCE) of silicon as a method to bypass some of the challenges found in traditional Liquid Phase Metal-assisted Chemical Etching (LP-MaCE). Average etch rates for Ag, Au, and Pd/Au catalysts were established at 31, 70, and 96 nm/min respectively while the relationship between etch rate and substrate temperature was examined experimentally. Just as with LP-MaCE, 3D catalyst motion was maintained and 3D structures were fabricated using nanoparticle and lithography patterned catalysts. VP-MaCE was found to produce less microporous silicon as compared to LP-MaCE and the diffusion/reduction distance of Ag ions was significantly reduce. This process sacrifices etch rate for increased etch uniformity and lower stiction for applications in MicroElectroMechanical Systems (MEMS) processing.
Citation
ACS Nano
Volume
24
Issue
24

Keywords

Metal-assisted Chemical Etching, Vapor Phase, Nanofabrication

Citation

Hildreth, O. and Schmidt, D. (2013), Vapor Phase Metal-assisted Chemical Etching of Silicon, ACS Nano (Accessed July 22, 2024)

Issues

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Created March 14, 2013, Updated February 19, 2017