Lenhart, J.
(2002),
Understanding Interfacial Deviations in Lithographic Pattern Profiles, Understanding Interfacial Deviations in Lithographic Pattern Profiles
(Accessed July 27, 2024)
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Understanding Interfacial Deviations in Lithographic Pattern Profiles
Published
Author(s)
Abstract
A combination of analysis tools (x-ray and neutron reflectivity and scattering, contact angle, fluorescence labeling, and near edge x-ray absorption fine structure, NEXAFS) is being developed and adapted to tackle important technical obstacles facing the lithography community. One current focus is on identifying the mechanisms that cause lithographic patterns to deviate near an interface. Photolithography is the process used by integrated circuit (IC) chip manufacturers to print circuit tree patterns on wafers and it accounts for about 35 % of the manufacturing cost of todays IC chip. As IC chip feature sizes shrink, the demand on the performance of lithographic films is ever more challenging (e.g., well defined features less than 100 nm in dimension with line edge roughnessCitation
Understanding Interfacial Deviations in Lithographic Pattern Profiles
Pub Type
Others
Keywords
anti-reflective coating, ARC, epoxy films, IC chip, interfacial deviations, lithographic pattern profiles, lithography, photolithography
Citation
Issues
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Created February 1, 2002, Updated February 17, 2017