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Ultrashallow Depth Profiling with Time-of-flight Secondary Ion Mass Spectrometry

Published

Author(s)

J. Bennett, John A. Dagata

Abstract

Time-of-flight secondary ion mass spectrometry (TOF-SIMS) is an efficient, sensitive method for characterizing semiconductor surfaces. In addition, TOF-SIMS can be applied in a depth profiling mode allowing qualitative characterization of the top 10?20 nm of material. The utility of TOF-SIMS ultrashallow depth profiling is demonstrated ion GaAs substrates that were passivated with P2S5 solutions and oxidized by exposure to UV/ozone treatment.
Citation
Journal of Vacuum Science and Technology B
Volume
12(1)

Citation

Bennett, J. and Dagata, J. (1994), Ultrashallow Depth Profiling with Time-of-flight Secondary Ion Mass Spectrometry, Journal of Vacuum Science and Technology B (Accessed April 15, 2024)
Created December 31, 1993, Updated October 12, 2021