Hudson, L.
, Seely, J.
, Glover, J.
, Henins, A.
and Pereira, N.
(2014),
Ultra-Thin Curved Transmission Crystals for High Resolving Power (up to E/¿E=6300) X-Ray Spectroscopy in the 6 keV to 13 keV Energy Range, Optical Letters, [online], https://doi.org/10.1364/OL.39.006839
(Accessed October 15, 2025)
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Ultra-Thin Curved Transmission Crystals for High Resolving Power (up to E/¿E=6300) X-Ray Spectroscopy in the 6 keV to 13 keV Energy Range
Published
Author(s)
, John F. Seely, , , Nino R. Pereira
Abstract
Ultra-thin curved transmission crystals operating in the Cauchois spectrometer geometry were evaluated for the purpose of achieving high spectral resolution in the 6 keV to 13 keV x-ray energy range. The crystals were silicon (111) and sapphire R- cut wafers, each 18 μm thick, and a silicon (100) wafer of 50 μm thickness. The W Lα1 spectral line at 8.398 keV from a laboratory source was used to evaluate the resolution. The highest crystal resolving power, E/ΔE = 6300, was achieved by diffraction from the (33-1) planes of the Si(100) wafer that was cylindrically bent to a radius of curvature of 254 mm, where the (33-1) planes have an asymmetric angle of 13.26o from the normal of the crystal surface facing the x-ray source. This work demonstrates the ability to measure highly-resolved line shapes of the K transitions of the elements Fe through Kr and the L transitions of the elements Gd through Th using a relatively compact spectrometer optical system and readily available thin commercial wafers. The intended application is as a diagnostic of laser-produced plasmas where the presence of multiple charged states and broadenings from high temperature and density requires high-resolution methods that are robust in a noisy source environment. © 2014 Optical Society of AmericaCitation
Optical Letters
Volume
39
Pub Type
Journals
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Keywords
ultra-thin crystals, resolving power, x-ray spectroscopy
Citation
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Created December 9, 2014, Updated November 10, 2018