Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Ultra-Low Resistance Contacts to GaAs/AlGaAs Quantized Hall Resistors

Published

Author(s)

Kevin C. Lee

Abstract

Contacts to quantized Hall resistors (QHRs) must meet demanding specifications for contact resistance, reliability, ruggedness, and resistance to degradation. A study of contact materials showed that contacts composed primarily of Indium meet all of these specifications, but experience has shown that contacts of sufficient quality are hard to make reproducibly. The principal factors influencing contact quality are the concentration of electrically active defects in the contact region, and the uniformity of the metal-semiconductor interface. The former can be minimized by the use of high purity materials and careful cleaning. The work reported in this paper has resulted in the development of a technique for reliably producing contacts with high interfacial uniformity and high quality.
Proceedings Title
Proc. of Extended Abstracts of 32nd State of the Art Program on Compound Semiconductors
Conference Dates
May 14-19, 2000
Conference Location
Toronto, CA

Keywords

alloyed contacts, GaAs, indium, ohmic contacts, quantized hall resistor, quantum hall effect, two dimensional electron gas

Citation

Lee, K. (2000), Ultra-Low Resistance Contacts to GaAs/AlGaAs Quantized Hall Resistors, Proc. of Extended Abstracts of 32nd State of the Art Program on Compound Semiconductors, Toronto, CA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=16563 (Accessed June 2, 2023)
Created May 1, 2000, Updated February 19, 2017