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Two-Phonon Infrared Spectra of Si and Ge: Calculating and Assigning Features
Published
Author(s)
Eric L. Shirley, Hadley Lawler
Abstract
Third-order density-functional perturbation theory yields the terahertz/far-infrared absorption spectra for silicon and germanium, including all two-phonon combination and difference features. Temperature-dependent spectra are compared to available experimental results. Critical-point analysis is used to identify the branch and wave-vector indices of many features.
Citation
Physical Review B (Condensed Matter and Materials Physics)
absorption spectrum, critical point, germanium, phonon, silicon, terahertz
Citation
Shirley, E.
and Lawler, H.
(2007),
Two-Phonon Infrared Spectra of Si and Ge: Calculating and Assigning Features, Physical Review B (Condensed Matter and Materials Physics), [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=841089
(Accessed October 17, 2025)