Shirley, E.
and Lawler, H.
(2007),
Two-Phonon Infrared Spectra of Si and Ge: Calculating and Assigning Features, Physical Review B (Condensed Matter and Materials Physics), [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=841089
(Accessed October 12, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Two-Phonon Infrared Spectra of Si and Ge: Calculating and Assigning Features
Published
Author(s)
, Hadley Lawler
Abstract
Third-order density-functional perturbation theory yields the terahertz/far-infrared absorption spectra for silicon and germanium, including all two-phonon combination and difference features. Temperature-dependent spectra are compared to available experimental results. Critical-point analysis is used to identify the branch and wave-vector indices of many features.Citation
Physical Review B (Condensed Matter and Materials Physics)
Volume
76
Issue
No. 5
Pub Type
Journals
Download Paper
Keywords
absorption spectrum, critical point, germanium, phonon, silicon, terahertz
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created August 16, 2007, Updated February 17, 2017