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Two-Phonon Infrared Spectra of Si and Ge: Calculating and Assigning Features

Published

Author(s)

Eric L. Shirley, Hadley Lawler

Abstract

Third-order density-functional perturbation theory yields the terahertz/far-infrared absorption spectra for silicon and germanium, including all two-phonon combination and difference features. Temperature-dependent spectra are compared to available experimental results. Critical-point analysis is used to identify the branch and wave-vector indices of many features.
Citation
Physical Review B (Condensed Matter and Materials Physics)
Volume
76
Issue
No. 5

Keywords

absorption spectrum, critical point, germanium, phonon, silicon, terahertz

Citation

Shirley, E. and Lawler, H. (2007), Two-Phonon Infrared Spectra of Si and Ge: Calculating and Assigning Features, Physical Review B (Condensed Matter and Materials Physics), [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=841089 (Accessed June 14, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created August 16, 2007, Updated February 17, 2017