Ma, T.
and Leone, S.
(2002),
Two-Dimensional Periodic Alignment of Self-Assembled Ge Islands on Patterned Si(001) Surfaces, Applied Physics Letters
(Accessed May 9, 2025)
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Two-Dimensional Periodic Alignment of Self-Assembled Ge Islands on Patterned Si(001) Surfaces
Published
Author(s)
T Ma,
Abstract
Two-dimensional alignment of Ge islands is obtained by molecular beam epitaxy of Ge on lithographically patterned Si(001) surfaces composed of periodic arrays of square Si mesas. When the periof of the Si mesa arrays is reduced to 140 nm, a one island on one mesa relationship is achieved. The Ge islands have an average base width of 85 nm and take on the shape of a truncated pyramid with four 114} facets and a (001) top. The patterning also serves to improve the island size uniformity. The dependencies of the island morphology on the sizes of the Si mesas and Ge coverages are examinde to clarify the mechanism of preferential nucleation of Ge islands on the tops of Si mesas.Citation
Applied Physics Letters
Volume
80
Issue
No. 3
Pub Type
Journals
Keywords
Ge islands, Si(001) surfaces, strain relaxation
Citation
Issues
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Created December 31, 2001, Updated October 12, 2021