NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.
Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.
An official website of the United States government
Here’s how you know
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Twin Plane Re-entrant Mechanism for Catalytic Nanowire Growth
Published
Author(s)
Andrew D. Gamalski, Peter W. Voorhees, Renu Sharma, Caterina Ducati, Stephan Hofmann
Abstract
We observe a twin plane re-entrant based growth mechanism for Au catalyzed Ge nanowire growth using video-rate lattice-resolved environmental transmission electron microscopy. For a [112] growth direction, we find a convex, V-shaped liquid catalyst-nanowire growth interface, composed of two Ge (111) planes that are truncated towards the triple phase boundary, that allows the interface to advance in discrete steps. The nanoscale geometry allows steady state growth based on a single twin boundary at the nanowire centre. We propose that the nucleation barrier at the twin plane re-entrant groove is effectively reduced by the line energy and hence the twin acts as a preferential nucleation site for atomic steps, which dictates the observed growth behavior.
Gamalski, A.
, Voorhees, P.
, Sharma, R.
, Ducati, C.
and Hofmann, S.
(2014),
Twin Plane Re-entrant Mechanism for Catalytic Nanowire Growth, Nano Letters, [online], https://doi.org/10.1021/nl404244u, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=913029
(Accessed October 11, 2025)