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Tunable ultraviolet photoresponse in solution-processed p-n junction photodiodes based on transition metal oxides

Published

Author(s)

Ting Xie, Guannan Liu, Baomei Wen, Jong Y. Ha, Nhan Van Nguyen, Abhishek Motayed, Ratan K. Debnath

Abstract

Solution-processed p-n heterojunction photodiodes have been fabricated based on transition metal oxides in which NiO and ternary Zn1-xMgxO (x = 0 - 0.1) have been employed as p-type and n-type semiconductors, respectively. Composition related structural, electrical, and optical properties are also investigated for all the films. It has been observed that the bandgap of Zn1-xMgxO films can be tuned between 3.24 eV to 3.49 eV by increasing Mg content. The fabricated highly visible-blind p-n junction photodiodes show excellent rectification along with good photoresponse and quantum efficiency under UV illumination. With an applied reverse bias of 1 V and depending on the value of x, the maximum responsivity and detectivity of the devices varied between (0.22 - 0.4) A/W and (0.17 - 2.2) × 1012 Jones, respectively. The photodetectors show excellent UV to visible rejection ratio. Compositional non-uniformity has been observed locally in the alloyed films with x = 0.1, which is being manifested in photoresponse and x-ray analysis data. Over all, this paper shows a simple solution-processed, low cost, band tunable photodiodes with excellent figures of merit operated under low bias
Citation
ACS Applied Materials and Interfaces

Citation

Xie, T. , Liu, G. , Wen, B. , Ha, J. , Nguyen, N. , Motayed, A. and Debnath, R. (2015), Tunable ultraviolet photoresponse in solution-processed p-n junction photodiodes based on transition metal oxides, ACS Applied Materials and Interfaces (Accessed July 22, 2024)

Issues

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Created April 20, 2015, Updated October 12, 2021