Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Tunable Spin Qubit Coupling Mediated by a Multi-Electron Quantum Dot

Published

Author(s)

Vanita Srinivasa, Haitan Xu, Jacob M. Taylor

Abstract

We present an approach for entangling electron spin qubits localized on spatially separated impurity atoms or quantum dots via a multi-electron, two-level quantum dot. The effective exchange interaction mediated by the dot can be understood as the simplest manifestation of Ruderman- Kittel-Kasuya-Yosida exchange, and can be manipulated through gate voltage control of level splittings and tunneling amplitudes within the system. This provides both a high degree of tuneability and a means for realizing high-fidelity two-qubit gates between spatially separated spins, yielding an experimentally accessible method of coupling donor electron spins in silicon via a hybrid impurity-dot system.
Citation
Physical Review Letters

Keywords

quantum dots, impurity atoms, exchange interaction, entanglement, two-qubit gate, phosphorus donors, silicon, electrical control, electron spin qubits

Citation

Srinivasa, V. , Xu, H. and Taylor, J. (2015), Tunable Spin Qubit Coupling Mediated by a Multi-Electron Quantum Dot, Physical Review Letters, [online], https://doi.org/10.1103/PhysRevLett.114.226803 (Accessed May 26, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created June 4, 2015, Updated November 10, 2018