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Transpinnor: A New Giant Magnetoresistive Spin-Valve Device

Published

Author(s)

E J. Torok, S Zurn, S Bae, P J. Chen, William F. Egelhoff Jr., L Sheppard, R Spitzer, J Judy

Abstract

This paper discusses the fundamental physics and device-operating mechanisms of Transpinnor, a kind of multi-functional active solid state device, newly designed by Integrated magnetoelectronics corporation (IME). The Transpinnor is the modified Wheatstone bridge configuration, in which the four resistors are substituted by GMR elements. Close-flux structures of metallic pseudo spin valves and anti-ferromagnetic (AF) α-Fe2O3 exchange biased bottom giant magnetoresistive (GMR) spin valve (BSV) have been used for the GMR elements to investigate the magneto-electronic device characteristics of Transpinnor. AC and DC output characteristics of patterned Transpinnor suggest that Transpinnor can be promisingly replaced for transistors and transformers, which are currently used in microelectronic technology.
Citation
IEEE Transactions on Magnetics

Keywords

giant magnetoresistance (GMR), random access memory, transpinnor

Citation

Torok, E. , Zurn, S. , Bae, S. , Chen, P. , Egelhoff Jr., W. , Sheppard, L. , Spitzer, R. and Judy, J. (2002), Transpinnor: A New Giant Magnetoresistive Spin-Valve Device, IEEE Transactions on Magnetics (Accessed April 13, 2024)
Created March 31, 2002, Updated October 12, 2021