Nikoobakht, B.
(2007),
Towards Industrial Scale Fabrication of Nanowire-Based Devices, Chemistry of Materials
(Accessed September 8, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Towards Industrial Scale Fabrication of Nanowire-Based Devices
Published
Author(s)
Abstract
The key requirements for mass fabrication of nanodevices are directed positioning and alignment of nanoparticles (e.g., nanowires) with known registries on a large scale. Here, these issues are addressed in a high throughput and scalable approach for production of nanodevices containing either a single nanowire (NW) or group of horizontal NWs. The central element in this architecture is selective and confined growth of horizontal NWs on a surface using mobile gold nanodroplets. This bottom-up architecture produces NWs with diameters less than 20 nm and its perfect consistency with optical lithography is demonstrated. To illustrate the capabilities of this technique, large numbers of electrically addressable zinc oxide NWs and their top-gated field-effect transistors (FET) are prepared in two and three photolithographic steps. This fabrication method opens the path to a new generation of non-conventional optoelectronic nanodevices, nanosensors and impacts the nanoelectronic industry.Citation
Chemistry of Materials
Volume
19
Issue
22
Pub Type
Journals
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created April 11, 2007, Updated February 19, 2017