Threshold Dynamics of a Semiconductor Single Atom Maser

Published

August 31, 2017

Author(s)

Michael Gullans, Jacob M. Taylor, Yinyiu Liu, J. Stehlik, Christopher Eichler, X Mi, T Hartke, Jason Petta

Abstract

We demonstrate a single-atom maser consisting of a semiconductor double quantum dot (DQD) that is embedded in a high quality factor microwave cavity. A finite bias drives the DQD out of equilibrium resulting in sequential single electron tunneling and masing. We demonstrate a dynamic tuning protocol that allows us to controllably increase the time-averaged repumping rate of the DQD at a fixed level detuning and quantitatively study the transition through the masing threshold. The observed threshold behavior is in agreement with an existing single atom maser theory when small corrections from lead emission are taken into account. We further examine the crossover from incoherent to coherent emission by measuring the photon statistics across the masing transition.

Citation

Physical Review Letters

Volume

119

Pub Type

Journals

Download Paper

DOI Link

Keywords

maser, quantum dot, circuit QED

Citation

Gullans, M. , Taylor, J. , Liu, Y. , Stehlik, J. , Eichler, C. , Mi, X. , Hartke, T. and Petta, J. (2017), Threshold Dynamics of a Semiconductor Single Atom Maser, Physical Review Letters, [online], https://doi.org/10.1103/PhysRevLett.119.097702 (Accessed April 23, 2024)