Three-dimensional simulation study of the improved on/off current ratio in silicon nanowire field-effect transistors

Published

September 30, 2008

Author(s)

Chang-Yong Choi, Won-Ju Cho, Sang-Mo Koo, John S. Suehle, Curt A. Richter, Qiliang Li, Eric Vogel

Abstract

In this paper, we report an approach based on three-dimensional numerical simulations for the investigation of the dependence of the on/off current ratio in silicon nanowire (SiNW) field-effect transistors (FETs) on the channel width. In order to investigate the transport behavior in the device with different channel geometries, we have performed detailed two-dimensional and three-dimensional simulations of SiNWFETs and control FETs with a fixed channel length L and thickness t but varying channel width W from 5nm and 5¿m. By evaluating the charge distributions and current flowlines of both two- and three-dimensional structures, we have shown that the increase of ¿on state¿ conduction current in SiNW channel is a dominant factor, which consequently result in more than two orders of magnitude improvement in the on/off current ratio.

Citation

The Journal of the Korean Physical Society

Volume

53

Issue

3

Pub Type

Journals

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Keywords

nanowire, SiNWFET, simulation, on/off current ratio

Citation

Choi, C. , Cho, W. , Koo, S. , Suehle, J. , Richter, C. , Li, Q. and Vogel, E. (2008), Three-dimensional simulation study of the improved on/off current ratio in silicon nanowire field-effect transistors, The Journal of the Korean Physical Society, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32936 (Accessed October 12, 2025)