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Thermal Stability of MOCVD and HVPE GaN Layers in H2, HCl, NH3 and N2

Published

Author(s)

M A. Mastro, O M. Kryliouk, M D. Reed, T J. Anderson, Albert Davydov, Alexander J. Shapiro

Abstract

This work represents a complete study of GaN annealed in H2, HCl, NH3 and N2. The GaN thermal behavior was evaluated by comparison of MOCVD and HVPE samples. The MOCVD films were observed to undergo dissociative sublimation mechanism with only gaseous species forming, while the HVPE films reacted with ambient gasses to form condensed Ga in addition to the gaseous species. Differences in crystal quality for MOCVD and HVPE samples resulting from the different growth mechanisms account for the observed difference.
Citation
Physica Status Solidi A-Applications and Materials Science
Volume
188
Issue
No. 1

Keywords

gallium nitride, pressure, thermal stability

Citation

Mastro, M. , Kryliouk, O. , Reed, M. , Anderson, T. , Davydov, A. and Shapiro, A. (2001), Thermal Stability of MOCVD and HVPE GaN Layers in H<sub>2</sub>, HCl, NH<sub>3</sub> and N<sub>2</sub>, Physica Status Solidi A-Applications and Materials Science (Accessed April 15, 2024)
Created October 31, 2001, Updated October 12, 2021