NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.

Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.

U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

PUBLICATIONS

Theory of Ballistic Electron Emission Spectroscopy of NiSi2/Si(111) Interfaces

Published

Author(s)

Mark D. Stiles, D Hamann

Abstract

We discuss theoretical calculations of ballistic electron emission microscopy spectra for A- and B-type NiSi2-Si(111) interfaces. The calculations are based on a first-principles computation of the transmission across the interfaces and a model calculation of the electrons tunneling from the tip. We compare the calculated spectra with existing experimental data and discuss a way of presenting experimental data that highlights the transmission process with respect to contributions from the tunneling distribution
Citation
Materials Science and Engineering B-Solid State Materials for Advanced Technology
Volume
14
Issue
3
Pub Type
Journals
Nanoelectronics

Citation

Stiles, M. and Hamann, D. (1992), Theory of Ballistic Electron Emission Spectroscopy of NiSi<sub>2</sub>/Si(111) Interfaces, Materials Science and Engineering B-Solid State Materials for Advanced Technology (Accessed October 21, 2025)

Issues

If you have any questions about this publication or are having problems accessing it, please contact [email protected].

Created January 1, 1992, Updated February 19, 2017
Was this page helpful?