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Theory of Ballistic Electron Emission Spectroscopy of NiSi2/Si(111) Interfaces

Published

Author(s)

Mark D. Stiles, D Hamann

Abstract

We discuss theoretical calculations of ballistic electron emission microscopy spectra for A- and B-type NiSi2-Si(111) interfaces. The calculations are based on a first-principles computation of the transmission across the interfaces and a model calculation of the electrons tunneling from the tip. We compare the calculated spectra with existing experimental data and discuss a way of presenting experimental data that highlights the transmission process with respect to contributions from the tunneling distribution
Citation
Materials Science and Engineering B-Solid State Materials for Advanced Technology
Volume
14
Issue
3

Citation

Stiles, M. and Hamann, D. (1992), Theory of Ballistic Electron Emission Spectroscopy of NiSi<sub>2</sub>/Si(111) Interfaces, Materials Science and Engineering B-Solid State Materials for Advanced Technology (Accessed April 16, 2024)
Created January 1, 1992, Updated February 19, 2017