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Synthetic Antiferromagnetic Spintronics

Published

Author(s)

Rembert Duine, Kyung Jin Lee, Stuart S. Parkin, Mark D. Stiles

Abstract

Spintronic and nanomagnetic devices often derive their functionality from layers of different materials and the interfaces between them. This is especially true for synthetic antiferromagnets — two or more ferromagnetic layers aligned in antiparallel arrangement and separated by metallic spacers or tunnel barriers. Here, we discuss the new opportunities that arise from synthetic antiferromagnets, as compared to crystal antiferromagnets or ferromagnets.
Citation
Nature Physics
Volume
14
Issue
3

Keywords

Spintronics, Giant Magnetoresistance, Tunneling Magnetoresistance, synthetic antiferromagnet, magnetic multilayer, interlayer exchange coupling

Citation

Duine, R. , Lee, K. , Parkin, S. and Stiles, M. (2018), Synthetic Antiferromagnetic Spintronics, Nature Physics, [online], https://doi.org/10.1038/s41567-018-0050-y, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=923533 (Accessed June 19, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created March 1, 2018, Updated October 12, 2021