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Synthesis and Electronic Properties of the Misfit Layered Compound [(PbSe)1.00]1[MoSe2]1

Published

Author(s)

Ian M. Anderson, Michael D. Anderson, Andrew A. Herzing, Colby Heideman, Raimar Rostek, David C. Johnson

Abstract

An ultra-low thermal conductivity compound with the ideal formula [(PbSe)1.00]1[MoSe2]1 has been successfully crystallized across a range of compositions. The lattice parameters varied from 12.41 Å to 12.75 Å and the quality of the observed 00ℓ diffraction patterns varied through the composition region where the structure crystallized. TEM cross sections confirm the interleaving of bilayers of PbSe with Se-Mo-Se trilayers. Measured resistivity values ranged over five orders of magnitude, from 0.307 Ωm to 70 μΩm, and Seebeck coefficients ranged from -181 μV/K to 91 μV/K in the samples after the initial annealing to form the basic structure. Annealing in an open system results in two distinctly different behaviors: a combined high conductivity / low Seebeck coefficient, as expected for a heavily doped semiconductor or metal, and a lower conductivity / higher Seebeck coefficient, as expected for a semiconductor. Annealing of samples under a controlled atmosphere of selenium resulted in low conductivities and large negative Seebeck coefficients, suggesting an n-doped semiconductor. STEM Z-contrast images revealed an interesting volume defect, where PbSe grew through a region where a layer of MoSe2 would be expected in the perfect structure. Further studies are required to correlate the density of these defects with the observed electrical properties.
Citation
Journal of Electronic Materials
Volume
39
Issue
9

Keywords

chalcogenides, thin film deposition, electrical resistivity, Seebeck coefficient, X-ray diffraction, STEM Z-contrast imaging, turbostratic disorder

Citation

Anderson, I. , Anderson, M. , Herzing, A. , Heideman, C. , Rostek, R. and Johnson, D. (2010), Synthesis and Electronic Properties of the Misfit Layered Compound [(PbSe)1.00]1[MoSe2]1, Journal of Electronic Materials, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=903568 (Accessed April 16, 2024)
Created September 1, 2010, Updated February 19, 2017