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Structure-Property Relationships in Pure and Acceptor-Doped Ba(1-x)Sr(x)Ti(3) Thin Films for Tunable Microwave Applications

Published

Author(s)

Melanie W. Cole, P. C. Joshi, E. Ngo, C. Hubbard, M. Ervin, M. Wood, Richard G. Geyer

Abstract

The influence of low concentration (1 mol%) Mg-doping on the structural, microstructural, surface morphological and dielectric properties of Ba(1-x)Srd(x)TiO(3) thin films has been measured and analyzed. The films were fabricated on MgO and Pt-Si substrates via the metalorganic solution deposition technique using carboxylate-alkoxide precursors and post deposition annealed at 800 Celsius (film/MgO substrates) and 750 Celsius (film/Pt-Si substrates). The structure, microstructure, surface morphology and film/substrate compositional quality were analyzed by glancing angle x-ray diffraction, field emission scanning microscopy, atomic force microscopy, and Auger electron spectroscopy studies. Dielectric properties of unpatterned films were measured at 10 GHz using a coupled, tuned split dielectric resonator system and at 100 kHz using metal-insulator-metal capacitors. The Mg-doped BST films exhibited improved dielectric loss and insulating characteristics compared to the undoped Bad(0.6)Sr(0.4)TiOd(3) thin films. The improved dielectric properties, low leakage current, and good tunability of the low level Mg-doped BST thin films merit strong potential for utilization in microwave tunable devices.
Citation
Journal of Applied Physics
Volume
92
Issue
1

Keywords

microwave dielectric properties, acceptor-doped barium strontium titanate films

Citation

Cole, M. , Joshi, P. , Ngo, E. , Hubbard, C. , Ervin, M. , Wood, M. and Geyer, R. (2002), Structure-Property Relationships in Pure and Acceptor-Doped Ba<sub>(1-x)</sub>Sr<sub>(x)</sub>Ti<sub>(3)</sub> Thin Films for Tunable Microwave Applications, Journal of Applied Physics (Accessed April 15, 2024)
Created June 30, 2002, Updated October 12, 2021