Structural Properties of Bi2Te3 and Bi2Se3 Topological Insulators Grown by Molecular Beam Epitaxy on GaAs(001) Substrates

Published

October 24, 2011

Author(s)

X. Liu, D. J. Smith, J. Fan, Y.-H. Zhang, H. Cao, Y. P. Chen, J. Leiner, Brian Kirby, M. Dobrowolska, J. K. Furdyna

Abstract

Thin films of Bi₂Te₃ and Bi₂Se₃ have been grown on deoxidized GaAs(100) substrates using molecular beam epitaxy. Cross-sectional transmission electron microscopy established the highly parallel nature of the Bi-Te(Se)-Bi-Te(Se)-Bi quintuple layers despite the slightly wavy GaAs substrate and the different crystal symmetries of the two materials. Raman mapping confirmed the presence of the strong characteristic peaks reported previously for these materials in bulk form. The overall quality of these films emphasizes the potential for future applications combining topological insulators with ferromagnetic semiconductors.

Citation

Applied Physics Letters

Volume

99

Issue

17

Pub Type

Journals

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Keywords

topological insulators, magnetic semiconductors

Citation

Liu, X. , Smith, D. , Fan, J. , Zhang, Y. , Cao, H. , Chen, Y. , Leiner, J. , Kirby, B. , Dobrowolska, M. and Furdyna, J. (2011), Structural Properties of Bi₂Te₃ and Bi₂Se₃ Topological Insulators Grown by Molecular Beam Epitaxy on GaAs(001) Substrates, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=909092 (Accessed October 15, 2025)