Wang, W.
, Lee, S.
and Chuang, T.
(2002),
Steady-State Crack Growth Along a Grain Boundary in Interconnects With a High Electric Field Intensity, Steady-State Crack Growth Along a Grain Boundary in Interconnects With a High Electric Field Intensity (Accessed May 17, 2026)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Steady-State Crack Growth Along a Grain Boundary in Interconnects With a High Electric Field Intensity
Published
Author(s)
W L. Wang, S K. Lee, Tze J. Chuang
Abstract
A pre-existing microcrack is considered to grow in steady state along a grain boundary of an interconnect line under the action of an applied electric field. Consistent with electromigration, the mechanism of crack growth is assumed via diffusive transport of atoms from both crack surfaces to the grain boundary. A set of second order nonlinear ordinary differential equations for the crack shape is derived from physics principles and solved numerically using fourth-order Runge-Kutta method, coupled with a two-point shooting method. The results showed that the steady-state crack velocity, V, is proportional to the applied field, Eo, with an exponent of 1.5, that is V = AEo1.5, in agreement with the previous analysis. However, the proportionality constant A is enhanced owing to electric field concentration at the crack tip.Citation
Steady-State Crack Growth Along a Grain Boundary in Interconnects With a High Electric Field Intensity
Volume
82
Issue
No. 5
Pub Type
Others
Keywords
crack growth, electromigration, grain-boundary cracks, interconnect, interface, mass transport, Runge-Kutta method
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact [email protected].
Created March 1, 2002, Updated June 2, 2021