Spin Dependent Charge Pumping in SiC Metal-Oxide-Semiconductor Field-Effect-Transistors

Published

August 25, 2011

Author(s)

Brad Bittel, Patrick Lenahan, Jason Ryan, Jody Fronheiser, Aivars Lelis

Abstract

We demonstrate a very powerful electrically detected magnetic resonance (EDMR) technique, spin dependent charge pumping (SDCP) and apply it to 4H SiC metal-oxide-semiconductor field-effect-transistors (MOSFETs). SDCP combines a widely used electrical characterization tool with the most powerful analytical technique for providing atomic scale structure of point defects in electronic materials. SDCP offers a large improvement in sensitivity over the previously established EDMR technique called spin dependent recombination, offering higher sensitivity and accessing a wider energy range within the bandgap.

Citation

Applied Physics Letters

Pub Type

Journals

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Keywords

Magnetic Resonance, Electron Spin Resonance, Charge Pumping

Citation

Bittel, B. , Lenahan, P. , Ryan, J. , Fronheiser, J. and Lelis, A. (2011), Spin Dependent Charge Pumping in SiC Metal-Oxide-Semiconductor Field-Effect-Transistors, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=909248 (Accessed October 11, 2025)