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Spin Dependent Charge Pumping in SiC Metal-Oxide-Semiconductor Field-Effect-Transistors
Published
Author(s)
Brad Bittel, Patrick Lenahan, Jason Ryan, Jody Fronheiser, Aivars Lelis
Abstract
We demonstrate a very powerful electrically detected magnetic resonance (EDMR) technique, spin dependent charge pumping (SDCP) and apply it to 4H SiC metal-oxide-semiconductor field-effect-transistors (MOSFETs). SDCP combines a widely used electrical characterization tool with the most powerful analytical technique for providing atomic scale structure of point defects in electronic materials. SDCP offers a large improvement in sensitivity over the previously established EDMR technique called spin dependent recombination, offering higher sensitivity and accessing a wider energy range within the bandgap.
Bittel, B.
, Lenahan, P.
, Ryan, J.
, Fronheiser, J.
and Lelis, A.
(2011),
Spin Dependent Charge Pumping in SiC Metal-Oxide-Semiconductor Field-Effect-Transistors, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=909248
(Accessed October 11, 2025)