Spin Dependent Charge Pumping in SiC Metal-Oxide-Semiconductor Field-Effect-Transistors
Brad Bittel, Patrick Lenahan, Jason Ryan, Jody Fronheiser, Aivars Lelis
We demonstrate a very powerful electrically detected magnetic resonance (EDMR) technique, spin dependent charge pumping (SDCP) and apply it to 4H SiC metal-oxide-semiconductor field-effect-transistors (MOSFETs). SDCP combines a widely used electrical characterization tool with the most powerful analytical technique for providing atomic scale structure of point defects in electronic materials. SDCP offers a large improvement in sensitivity over the previously established EDMR technique called spin dependent recombination, offering higher sensitivity and accessing a wider energy range within the bandgap.
, Lenahan, P.
, Ryan, J.
, Fronheiser, J.
and Lelis, A.
Spin Dependent Charge Pumping in SiC Metal-Oxide-Semiconductor Field-Effect-Transistors, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=909248
(Accessed August 9, 2022)