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Smart Pyrometry for Combined Sample Temperature and Reflectance Measurements in Molecular-Beam Epitaxy

Published

Author(s)

Kristine A. Bertness

Abstract

We have fabricated spin-valve devices in a high-speed test structure that allows subnanosecond pulsed field excitation and high-bandwidth observation of the magnetoresistance response. The switching response varies for low-amplitude field pulses and approaches a consistent fast switch of less than 1 ns for field pulses of higher amplitude. For several pulse widths and amplitudes, the device switches into metastable states. The threshold amplitude fo the write-pulse was measured as a function of pulse duration for pulses as small as 250 ps in duration.
Citation
Journal of Vacuum Science and Technology B
Volume
18
Issue
3

Keywords

crystal growth, emissivity, molecular beam epitaxy, pyrometry, semiconductors, temperature measurement

Citation

Bertness, K. (2000), Smart Pyrometry for Combined Sample Temperature and Reflectance Measurements in Molecular-Beam Epitaxy, Journal of Vacuum Science and Technology B (Accessed July 24, 2024)

Issues

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Created June 1, 2000, Updated January 27, 2020