Bertness, K.
(2000),
Smart Pyrometry for Combined Sample Temperature and Reflectance Measurements in Molecular-Beam Epitaxy, Journal of Vacuum Science and Technology B
(Accessed February 4, 2026)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Smart Pyrometry for Combined Sample Temperature and Reflectance Measurements in Molecular-Beam Epitaxy
Published
Author(s)
Abstract
We have fabricated spin-valve devices in a high-speed test structure that allows subnanosecond pulsed field excitation and high-bandwidth observation of the magnetoresistance response. The switching response varies for low-amplitude field pulses and approaches a consistent fast switch of less than 1 ns for field pulses of higher amplitude. For several pulse widths and amplitudes, the device switches into metastable states. The threshold amplitude fo the write-pulse was measured as a function of pulse duration for pulses as small as 250 ps in duration.Citation
Journal of Vacuum Science and Technology B
Volume
18
Issue
3
Pub Type
Journals
Keywords
crystal growth, emissivity, molecular beam epitaxy, pyrometry, semiconductors, temperature measurement
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact [email protected].
Created June 1, 2000, Updated January 27, 2020