Second harmonic generation in GaAs-on-insulator waveguides fabricated at the wafer-scale

Published

March 18, 2020

Author(s)

Eric Stanton, Jeff Chiles, Nima Nader, Galan Moody, Nicolas Volet, Lin Chang, John E. Bowers, Sae Woo Nam, Richard Mirin

Abstract

Second harmonic generation (SHG) is demonstrated with unprecedented efficiency for a single-pass device. Modal phase-matching in GaAs-on-insulator waveguides is used to convert a 2.0 µm TE pump to a 1.0 µm TM signal with an efficiency of 40 W−1 in a length of 2.9 mm. The FWHM bandwidth of the signal is 0.5 nm, and efficient SHG is demonstrated over a temperature range of 45 ◦C. Devices are fabricated on 76 mm wafers with high uniformity and the loss at the signal wavelength is reduced by minimizing the surface defect states. The GaAs-on-insulator waveguides will enable an integrated f-2f self-referencing system through integration with SiN waveguides.

Citation

Optics Express

Volume

28

Issue

7

Pub Type

Journals

Download Paper

https://doi.org/10.1364/OE.389423

Local Download

Keywords

nonlinear optics, waveguides, semiconductors

Citation

Stanton, E. , Chiles, J. , Nader, N. , Moody, G. , Volet, N. , Chang, L. , Bowers, J. , Nam, S. and Mirin, R. (2020), Second harmonic generation in GaAs-on-insulator waveguides fabricated at the wafer-scale, Optics Express, [online], https://doi.org/10.1364/OE.389423, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=929429 (Accessed November 22, 2025)