Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Second harmonic generation in GaAs-on-insulator waveguides fabricated at the wafer-scale

Published

Author(s)

Eric J. Stanton, Jeff Chiles, Nima Nader, Galan Moody, Nicolas Volet, Lin Chang, John E. Bowers, Sae Woo Nam, Richard Mirin

Abstract

Second harmonic generation (SHG) is demonstrated with unprecedented efficiency for a single-pass device. Modal phase-matching in GaAs-on-insulator waveguides is used to convert a 2.0 µm TE pump to a 1.0 µm TM signal with an efficiency of 40 W−1 in a length of 2.9 mm. The FWHM bandwidth of the signal is 0.5 nm, and efficient SHG is demonstrated over a temperature range of 45 ◦C. Devices are fabricated on 76 mm wafers with high uniformity and the loss at the signal wavelength is reduced by minimizing the surface defect states. The GaAs-on-insulator waveguides will enable an integrated f-2f self-referencing system through integration with SiN waveguides.
Citation
Optics Express
Volume
28
Issue
7

Keywords

nonlinear optics, waveguides, semiconductors

Citation

Stanton, E. , Chiles, J. , Nader, N. , Moody, G. , Volet, N. , Chang, L. , Bowers, J. , Nam, S. and Mirin, R. (2020), Second harmonic generation in GaAs-on-insulator waveguides fabricated at the wafer-scale, Optics Express, [online], https://doi.org/10.1364/OE.389423 (Accessed July 20, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created March 18, 2020, Updated May 8, 2023