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Second harmonic generation in GaAs-on-insulator waveguides fabricated at the wafer-scale
Published
Author(s)
Eric Stanton, Jeff Chiles, Nima Nader, Galan Moody, Nicolas Volet, Lin Chang, John E. Bowers, Sae Woo Nam, Richard Mirin
Abstract
Second harmonic generation (SHG) is demonstrated with unprecedented efficiency for a single-pass device. Modal phase-matching in GaAs-on-insulator waveguides is used to convert a 2.0 µm TE pump to a 1.0 µm TM signal with an efficiency of 40 W−1 in a length of 2.9 mm. The FWHM bandwidth of the signal is 0.5 nm, and efficient SHG is demonstrated over a temperature range of 45 ◦C. Devices are fabricated on 76 mm wafers with high uniformity and the loss at the signal wavelength is reduced by minimizing the surface defect states. The GaAs-on-insulator waveguides will enable an integrated f-2f self-referencing system through integration with SiN waveguides.
Stanton, E.
, Chiles, J.
, Nader, N.
, Moody, G.
, Volet, N.
, Chang, L.
, Bowers, J.
, Nam, S.
and Mirin, R.
(2020),
Second harmonic generation in GaAs-on-insulator waveguides fabricated at the wafer-scale, Optics Express, [online], https://doi.org/10.1364/OE.389423, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=929429
(Accessed October 8, 2025)