September 1, 2026
Author(s)
Stephen Moxim, Gelu Comanescu, Cooper Voigt, Ory Maimon, Behrang Hamadani, Andrew Winchester, Emily Bittle, Qiliang Li, Travis Anderson, Jennifer Hite, Albert Davydov, Jason Campbell, Sujitra Pookpanratana, Jason Ryan
Wide bandgap semiconductors, including gallium nitride (GaN), are crucial for next-generation power electronics due to their superior properties compared to silicon. However, challenges in their fabrication, particularly with epitaxial regrowth for