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Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications

December 18, 2023

Author(s)

Ory Maimon, Qiliang Li

Power electronics are becoming increasingly more important as electrical energy constitutes 40 % of the total primary energy usage in the USA and is expected to grow rapidly with the emergence of electric vehicles, renewable energy generation, and energy

Measurement and Gate-Voltage Dependence of Channel and Series Resistances in Lateral Depletion-Mode b-Ga2O3 MOSFETs

June 9, 2023

Author(s)

Ory Maimon, Neil Moser, Kyle Liddy, Andrew Green, Kelson Chabak, Kin (Charles) Cheung, Sujitra Pookpanratana, Qiliang Li

Lateral depletion-mode, beta-phase gallium oxide (β-Ga2O3) metal-oxide-semiconductor field-effect transistors (MOSFETs) with source-drain spacings of 3 µm, 8 µm, and 13 µm are studied using a modified Transfer Length Method (TLM) to obtain sheet

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