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DC to GHz measurements of a near-ideal 2D material: P+ monolayers

March 8, 2024

Author(s)

Neil M. Zimmerman, Antonio Levy, Pradeep Namboodiri, Joshua M. Pomeroy, Xiqiao Wang, Joseph Fox, Richard M. Silver

P+ monolayers in Si are of great scientific and technological interest, both intrinsically as a material in the "ideal vacuum" of crystalline Si, and because they are showing great promise as qubits of electron and nuclear spin. The GHz complex

Enhanced Atomic Precision Fabrication by Adsorption of Phosphine into Engineered Dangling Bonds on H-Si Using STM and DFT

November 1, 2022

Author(s)

Jonathan Wyrick, Xiqiao Wang, Pradeep Namboodiri, Ranjit Kashid, Fan Fei, Joseph Fox, Richard M. Silver

Doping of Si using the scanning probe technique of hydrogen depassivation lithography has been shown to enable placing and positioning small numbers of P atoms with nanometer accuracy. Several groups have now used this capability to build devices that