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Displaying 1 - 4 of 4

Developing Single Layer MOS Quantum Dots for Diagnostic Qubits

December 28, 2020

Author(s)

Yanxue Hong, Aruna Ramanayaka, Ryan Stein, Joshua M. Pomeroy

The design, fabrication and characterization of single metal gate layer, metal-oxide- semiconductor (MOS) quantum dot devices robust against dielectric breakdown are presented as prototypes for future diagnostic qubits. These devices were developed as a

Reduction of charge offset drift using plasma oxidized aluminum in SETs

October 26, 2020

Author(s)

Yanxue Hong, Ryan Stein, Michael Stewart, Neil M. Zimmerman, Joshua M. Pomeroy

Aluminum oxide (AlOx)-based single-electron transistors (SETs) fabricated in ultra-high vacuum (UHV) chambers using in situ plasma oxidation show excellent stabilities over more than a week, enabling applications as tunnel barriers, capacitor dielectrics