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Search Publications by: Jason Campbell (Fed)

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Displaying 126 - 150 of 230

Frequency Dependent Charge Pumping -- A Defect Depth Profiling Tool?

January 31, 2013
Author(s)
Jason T. Ryan, Richard G. Southwick, Jason P. Campbell, Kin P. Cheung, John S. Suehle
We investigate the validity of using frequency-dependent charge pumping (FD-CP) to determine bulk defect depth distributions. Using simple physical arguments we conclude that: (1) the effective tunneling length to a bulk defect can be very different than

SERIES RESISTANCE: A MONITOR FOR HOT CARRIER STRESS

January 31, 2013
Author(s)
Jason P. Campbell, Serghei Drozdov, Kin P. Cheung, Richard G. Southwick, Jason T. Ryan, John S. Suehle, Anthony Oates
In this work, we examine a series resistance extraction technique which yields accurate values from single nano-scale devices. The series resistance values, derived from this extraction technique, are shown to be sensitive to hot carrier degradation and

Current Compliance Circuit to Improve Variation in ON State Characteristics and to Minimize RESET Current

October 7, 2012
Author(s)
Pragya R. Shrestha, Adaku Ochia, Jason P. Campbell, Canute I. Vaz, Jihong Kim, Kin P. Cheung, Helmut Baumgart, Gary Harris
The wide distribution of ON and OFF values and high SET current in resistive memory is attributed to the high current overshoot during the SET process. In this paper we show a circuit which is capable of precisely limiting the current during SET process

On the Contribution of Bulk Defects on Charge Pumping Current

October 1, 2012
Author(s)
Jason T. Ryan, Richard G. Southwick, Jason P. Campbell, Kin P. Cheung, John S. Suehle
Frequency dependent charge pumping (FD-CP) has emerged as a popular technique for studying the spatial and energetic distribution of defect centers in advanced high-k gate stacks. However, conflicting interpretations of the charge pumping frequency -

Physical Model for Random Telegraph Noise Amplitudes and Implications

June 12, 2012
Author(s)
Richard G. Southwick, Kin P. Cheung, Jason P. Campbell, Serghei Drozdov, Jason T. Ryan, John S. Suehle, Anthony Oates
Random Telegraph Noise (RTN) has been shown to surpass random dopant fluctuations as a cause for decananometer device variability, through the measurement of a large number of ultra-scaled devices [1]. The most worrisome aspect of RTN is the tail of the

Channel Length-Dependent Series Resistance?

June 10, 2012
Author(s)
Jason P. Campbell, Kin P. Cheung, Serghei Drozdov, Richard G. Southwick, Jason T. Ryan, Tony Oates, John S. Suehle
A recently developed series resistance (RSD) extraction procedure from a single nanoscale device is shown to be highly robust. Despite these virtues, the technique unexpectedly results in a channel length-dependent RSD which is observed across a wide range

High Speed Endurance and Switching Measurements for Memristive Switches

March 6, 2012
Author(s)
Pragya R. Shrestha, Adaku Ochia, Kin P. Cheung, Jason P. Campbell, Helmut Baumgart, Gary Harris
Accurate capture of the Set/Reset characteristics is a necessary but challenging task for the development of memristive switches. Here we describe and demonstrate a technique capable of meeting this challenge. This technique can measure the transient

Experimentally Based Methodology for Charge Pumping Bulk Defect Trapping Correction

December 15, 2011
Author(s)
Jason T. Ryan, Richard G. Southwick, Jason P. Campbell, Kin P. Cheung, Chadwin Young, John S. Suehle
We develop a simple experimental approach to remove bulk trap contributions from charge pumping data collected on devices which suffer from large amounts of bulk dielectric electron trapping. The approach is more desirable and easier to implement than

When Does a Circuit Really Fail?

December 15, 2011
Author(s)
Jason T. Ryan, Lan Wei, Jason P. Campbell, Richard G. Southwick, Kin P. Cheung, Tony Oates, Phillip Wong, John S. Suehle

High Speed Switching Characteristics of Pt/Ta2O5/Cu Memristive Switch

October 8, 2011
Author(s)
Pragya R. Shrestha, Adaku Ochia, Kin P. Cheung, Jason P. Campbell, Helmut Baumgart, Gary Harris
Accurate measurements of the transient details of switching a memristive switch are crucial to the elucidation of the switching mechanism. Such high-speed measurements are often plagued by artifacts. Here we describe a measurement technique capable of
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