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Search Publications by: Steven W. Robey (Fed)

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Displaying 26 - 49 of 49

Coordination and Local Transport Gap in C 60 Chains on a Pentacene Template

October 16, 2008
Author(s)
Dan B. Dougherty, W Jin, J Cullen, Gregory Dutton, J Reutt-Robey, Steven W. Robey
The adsorption of C60 on a bilayer film of pentacene on Ag(111) is studied with scanning tunneling microscopy and spectroscopy. At low coverage, C60 molecules form extended linear structures due to the templating effect of the pentacene bilayer. The

Ultraviolet Photoemission Spectra of Para-Phenylene-Ethynylene Thiols Chemisorbed on Gold

January 1, 2008
Author(s)
Christopher D. Zangmeister, Roger D. van Zee, Steven W. Robey, N E. Gruhn, Yuxing Yao, J M. Tour
Photoemission spectra of para-phenylene-ethynylene thiols chemisorbed on gold have been measured. Four compounds were studied: 4,4'-bis(phenylethynyl)-benzenethiol, 4 (phenylethynyl)benzenethiol, 4-ethynylbenzenethiol, and benzenethiol. The spectra were

Fermi Level Alignment and Electronic Levels in Molecular Wire Self-Assembled Monolayers on Au

October 1, 2004
Author(s)
Christopher D. Zangmeister, Steven W. Robey, Roger D. van Zee, Yuxing Yao, J M. Tour
A combination of one- and two-photon photoelectron spectroscopies are used to determine the electronic structure around the Fermi level for self-assembled monolayers of a prototypical molecular wire , 4,4 -(ethynylphenyl)-1-benzenethiol (C6H5-C≡C-C6H4-C≡C-

Valence Electron Orbitals of an Oligo(p-phenylene-ethynylene)thiol on Gold

March 1, 2004
Author(s)
Christopher D. Zangmeister, Steven W. Robey, Roger D. van Zee, Yuxing Yao, J M. Tour
One- and two-photon photoemission spectra have been measured for monolayers of oligo(para-phenylene-ethynylene) thiolate chemisorbed on gold surfaces. Within 5 eV of the Fermi level, four states are observed, two occupied (2.0 eV and 4.0 eV below the Fermi

Initial Etching of GaAs (001) During H 2 Plasma Cleaning

September 1, 2000
Author(s)
Steven W. Robey, K Sinniah
The initial etching of GaAs(001) during remote H 2 plasma etching for oxide removal was examined using Atomic Force Microscopy (AFM), coupled with in situ Reflection High Energy Diffraction (RHEED) and Auger spectroscopy. Localized etching of the GaAs

Mg/GaAs(001): A Highly Anisotropic Reaction Morphology

December 31, 1999
Author(s)
Steven W. Robey
The spontaneous growth of one-dimensional structures during reaction of Mg on GaAs(001) 4x2 Ga-stabilized surface was observed by in situ electron diffraction and ex situ atomic force microscopy (AFM). Reaction led to growth of an epitaxial, cubic phase

Anisotropic Microstructure Development During the Reaction of Mg With GaAs

February 18, 1998
Author(s)
Steven W. Robey
Reaction of Mg with GaAs (001) surface occurs at substrate temperatures above 250 K and leads to 3D growth of an epitaxial, cubic reaction phase with a lattice constant of 0.62 + 0.02nm, 9% larger than GaAs. The resulting anistotropic, 3-demiensional (3D)

Photoelectron Spectroscopy Studies of Cr(001) Near-Surface and Surface Magnetism

February 1, 1986
Author(s)
L Klebanoff, Steven W. Robey, Guangyao Liu, D Shirley
Angle-resolved photoelectron spectroscopy (ARPES) studies of Cr(001) near-surface and surface electronic structure are reviewed. The near-surface energy band dispersions were investigated along the [010] direction parallel to the crystal surface. The