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Displaying 776 - 800 of 2634

Fracture toughness measurement of thin nanoporous films on stiff substrates

June 15, 2009
Author(s)
Dylan Morris, Robert F. Cook
Nanoporous low-dielectric-constant films constitute a class of materials that are plagued by fracture concerns and are not amenable to traditional fracture toughness measurement techniques. An indentation fracture toughness measurement technique has been

Thermoelectric and Structural Characterization of Ba2Ho(Cu3-xCox)O6+y

June 13, 2009
Author(s)
Winnie K. Wong-Ng, Z Yang, Y F. Hu, Qingzhen Huang, Nathan Lowhorn, Makoto Otani, James A. Kaduk, Martin L. Green, Q Li
The search for thermoelectric materials for power generation and for solid-state cooling have led to the increased interest of layered cobalt-containing oxides because of their thermal stability at high temperature and their desirable thermoelectric

A High-throughput Screening System for Thermoelectric Material Exploration Based on Combinatorial Film Approach

May 7, 2009
Author(s)
Makoto Otani, Evan L. Thomas, Winnie Wong-Ng, Peter K. Schenck, Nathan Lowhorn, Martin L. Green, Hiroyuki Ohguchi
A high-throughput system that consists of a combinatorial tool (a sputtering deposition tool and a pulsed laser deposition tool) and two property screening devices, developed at NIST, was used for thermoelectric material exploration. The thermoelectric

Process-Controlled Plasma-Sprayed Yttria-Stabilized Zirconia Coatings: New Insights from

February 11, 2009
Author(s)
Y Li, W Chi, S Sampath, A N. Goland, H Herman, Andrew J. Allen, J Ilavsky
A multi-component microstructure model is applied in ultrasmall-angle X-ray scattering (USAXS) studies of the processing microstructure property relationships for two groups of plasma-sprayed yttria-stabilized zirconia (YSZ) thermal barrier coatings (TBCs)

Statistical analysis of a round-robin measurement survey of two candidate materials for a Seebeck coefficient Standard Reference Material

February 2, 2009
Author(s)
John Lu, Nathan Lowhorn, Winnie Wong-Ng, Weiping Zhang, Evan L. Thomas, Makoto Otani, Martin L. Green, Thanh N. Tran, Chris Caylor, Neil Dilley, Adams Downey, B Edwards, Norbert Elsner, S Ghamaty, Timothy Hogan, Qing Jie, Qiang Li, Joshua B. Martin, George S. Nolas, H Obara, Jeffrey Sharp, Rama Venkatasubramanian, Rhonda Willigan, Jihui Yang, Terry Tritt
In an effort to develop a Standard Reference Material (SRM ) for Seebeck coefficient, we have conducted a round-robin measurement survey of two candidate materials undoped Bi2Te3 and constantan (55% Cu and 45% Ni alloy). Measurements were performed in two

Synthesis and Transport Properties of Framework-Substituted Cs 8 Na 16 Cu 5 Ge 131

January 13, 2009
Author(s)
Matthew Beekman, James A. Kaduk, J Gryko, Winnie Wong-Ng, Alexander J. Shapiro, George S. Nolas
We report the synthesis and temperature dependent transport properties of a new type II germanium clathrate, Cs8Na16Cu5Ge131 (space group Fd3m; a = 15.42000(9) ) . In comparison to the parent compound Cs8Na16Ge136, Cu substitution for Ge on the clathrate

Measurement of Axisymmetric Crystallographic Texture

January 1, 2009
Author(s)
Mark D. Vaudin
Crystallographic texture has for many years been the fiefdom of metallurgists and geologists, who have developed elegant methodologies for the analysis of highly complex textures and texture evolutions. Over the past two decades, the importance and

Electronic Structure and Chemistry of Iron-Based Metal Oxide Nanostructured Materials: A NEXAFS Investigation of BiFeO3, Bi2Fe4O9, a-Fe2O3, g-Fe2O3, and Fe/Fe3O4

November 6, 2008
Author(s)
Tae-Jin Park, S Sambasivan, Daniel A. Fischer, R Ramesh, J A. Misewich, S S. Wong
We present a systematic and detailed Near Edge X-ray Absorption Fine Structure (NEXAFS) experimental investigation of the electronic structure and chemistry of iron-based metal oxide nanostructured (FeMONS) materials including BiFeO3, Bi2Fe4O9, a-Fe2O3, ?-

Correlation of Local Structure and Electrical Activation in Arsenic Ultra Shallow Junctions in Silicon

November 5, 2008
Author(s)
D. Giubertoni, Giancarlo Pepponi, Salvatore Gennaro, Massimo Bersani, M A. Sahiner, Stephen P. Kelty, Roisin Doherty, Majeed A. Foad, Max Kah, Karen J. Kirkby, Joseph Woicik
The understanding of the behavior of arsenic in highly doped near surface silicon layers is of crucial importance for the formation of N-type Ultra Shallow Junctions in current and future VLSI technology. This is of peculiar relevance when studying novel
Displaying 776 - 800 of 2634
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