U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications

NIST Authors in Bold

Displaying 7951 - 7975 of 143797

The Internal-Friction Tensor Q-1 iJ

October 12, 2021
Author(s)
Paul R. Heyliger, H M. Ledbetter, Sudook A. Kim
oustic-resonance spectroscopy enables obtaining the complete elastic-stiffness tensor C y in one measurement of the macroscopic-vibration frequencies of a regular-shape solid. Because the total elastic stiffness C y contains both real and imaginary parts

The Microwave Spectrum and Ground State Structure of H 2 O-HI

October 12, 2021
Author(s)
A McIntosh, T Walther, R R. Lucchese, J W. Bevan, R D. Suenram, A C. Legon
The microwave spectrum and ground state structure of H^ 2O HI are reported. The fitted ground state constants include: A 0=428.9 GHz, B 0=2189.7351(10) MHz, C 0=2175.9546(10) MHz, χ aa = -1479.399(20) MHz,(χ bb- χ cc) = -17.37(2) MHz. Evidence will be

The Mitochondrial Apoptosis-Induced Channel MAC and Bax Channels Are Regulated by Cytochrome C

October 12, 2021
Author(s)
Li Guo, D Pietkiewicz, M M. Pavlov, John J. Kasianowicz, L M. Dejean, S J. Korsmeyer, B Antonsson, K W. Kinnally
l-2 family proteins regulate the appearance of the high-conductance channel MAC (mitochondrial apoptosis-induced channel) 1 in the outer membranes of mitochondria early in apoptosis and regulate the release of cytochrome c during commitment to apoptosis

The Nanostructure Problem

October 12, 2021
Author(s)
Simon J. Billinge, Igor Levin
The powerful methods we have for solving the atomic structure of bulk crystals fail for nanostructured materials and there are currently no broadly applicable, quantitative and robust methods to replace them. The solution of this nanostructure problem is

The Role of Fluorine Chemistry in Anisotropic Etching of Dielectric Materials

October 12, 2021
Author(s)
B Ji, S A. Motika, P R. Badowski, S Dheandhanoo, C Timmons, D E. Hess, Eric C. Benck, Y Ye
Fluorine-containing compounds have for many years been utilized to etch dielectric materials such as silicon oxide. Maintaining the balance between the removal rate of material from the trench bottom and formation of the protective sidewall film is
Displaying 7951 - 7975 of 143797
Was this page helpful?