Mahan, A.
and Gallagher, A.
(2001),
Saturated defect densities of hydrogenated amorphous silicon grown by hot-wire chemical vapor deposition at rates up to 150 {?}/sec, <!-- Saturated defect densities of hydrogenated amorphous silicon grown by hot-wire chemical vapor deposition at rates up , Applied Physics Letters
(Accessed July 26, 2024)
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Saturated defect densities of hydrogenated amorphous silicon grown by hot-wire chemical vapor deposition at rates up to 150 {?}/sec,
Published
Author(s)
A H. Mahan, A Gallagher
Citation
Applied Physics Letters
Volume
78
Pub Type
Journals
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created January 1, 2001, Updated February 17, 2017