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Room-temperature skyrmions in strain-engineered FeGe thin films

Published

Author(s)

Sujan Budhathoki, Arjun Sapkota, Ka M. Law, Smriti Ranjit, Bhuwan Nepal, Brian D. Hoskins, Arashdeep S. Thind, Albina Y. Borisevich, Michelle E. Jamer, Travis J. Anderson, Andrew D. Koehler, Karl D. Hobart, Gregory M. Stephen, Don Heiman, Tim Mewes, Rohan Mishra, James C. Gallagher, Adam J. Hauser

Abstract

Skyrmion electronics hold great promise for low energy consumption and stable high information density, and stabilization of Skyrmion lattice (SkX) phase at or above room temperature is greatly desired for practical use. Topological Hall Effect can be used to identify candidate systems at or above room temperature, a challenging regime for direct observation by Lorentz electron microscopy. Atomically ordered FeGe thin films have been grown epitaxially on Ge(111) substrates with ~4% tensile strain. Magnetic characterization reveals strain enhancement of Curie temperature to 350 K, well above the bulk value of 278 K. Strong topological Hall effect is observed from 10 to 330K, including a significant increase at 330K, consistent with the relative temperature of SkX phase in bulk-like FeGe films. The results suggest that strained FeGe films may host a SkX phase above room temperature when significant tensile strain is applied.
Citation
Physical Review B
Volume
101
Issue
22

Keywords

skyrmions, magnetism
Created June 8, 2020, Updated June 9, 2020