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The role of Si in GaN/AlN/Si(111) PAMBE Epitaxy: Polarity and Inversion

Published

Author(s)

Alexana Roshko, Matthew D. Brubaker, Paul T. Blanchard, Todd E. Harvey, Kristine A. Bertness

Abstract

The microstructure, polarity and Si distribution in AlN/GaN layers grown by PAMBE on Si(111) was assessed by STEM. Samples grown under both metal- and nitrogen-rich conditions contained defects at the AlN/Si interface which suggest formation of an Al-Si eutectic. Correlated with this, interfacial segregation of Si was found in the samples. It is proposed that Si is dissolved in a eutectic layer floating on the AlN surface under metal-rich conditions and that it is incorporated into the film if the growth becomes nitrogen-rich, either intentionally or due to plasma source transients. These Si-rich layers appear to induce inversion of the nitride from nitrogen- to metal-polarity, and uncontrolled variations in the Si concentration cause occasional nonuniformity in the resulting inversion.
Citation
Japanese Journal of Applied Physics
Volume
58

Keywords

AlN, GaN, Si, polarity, inversion, PAMBE, STEM, EDS

Citation

Roshko, A. , Brubaker, M. , Blanchard, P. , Harvey, T. and Bertness, K. (2019), The role of Si in GaN/AlN/Si(111) PAMBE Epitaxy: Polarity and Inversion, Japanese Journal of Applied Physics, [online], https://doi.org/10.7567/1347-4065/ab1124 (Accessed December 9, 2022)
Created May 22, 2019, Updated June 1, 2020