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Research Update: Electron beam-based metrology after CMOS

Published

Author(s)

James A. Liddle, Brian D. Hoskins, Andras Vladar, John S. Villarrubia

Abstract

The strengths of and challenges facing electron-based metrology for post-CMOS technology are reviewed. Directed self-assembly, nanophotonics/plasmonics, and resistive switches and selectors, are examined as exemplars of important post-CMOS technologies. Materials, devices, and architectures emerging from these technologies pose new metrology requirements: defect detection, possibly subsurface, in soft materials, accurate measurement of size, shape, and roughness of structures for nanophotonic devices, contamination-free measurement of surface- sensitive structures, and identification of subtle structural, chemical, or electronic changes of state associated with switching in non-volatile memory elements. Electron-beam techniques are examined in the light of these emerging requirements. The strong electron-matter interaction provides measurable signal from small sample features, rendering electron-beam methods more suitable than most for nanometer-scale metrology, but as is to be expected solutions to many of the measurement challenges are yet to be demonstrated. The seeds of possible solutions are identified when they are available.
Citation
APL Materials
Volume
6
Issue
7

Keywords

scanning electron microscopy, transmission electron microscopy, critical dimension metrology

Citation

Liddle, J. , Hoskins, B. , Vladar, A. and Villarrubia, J. (2018), Research Update: Electron beam-based metrology after CMOS, APL Materials, [online], https://doi.org/10.1063/1.5038249 (Accessed August 19, 2022)
Created July 19, 2018, Updated November 10, 2018