Zhu, H.
, Pookpanratana, S.
, Bonevich, J.
, Natoli, S.
, Hacker, C.
, Ren, T.
, Suehle, J.
, Richter, C.
and Li, Q.
(2015),
Redox-Active Molecular Nanowire Flash Memory for High-Endurance and High-Density Non-Volatile Memory Applications, Advanced Materials, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=918627
(Accessed December 14, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Redox-Active Molecular Nanowire Flash Memory for High-Endurance and High-Density Non-Volatile Memory Applications
Published
Author(s)
, , , Sean Natoli, , Tong Ren, , , Qiliang Li
Citation
Advanced Materials
Volume
7
Issue
49
Pub Type
Journals
Download Paper
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created December 16, 2015, Updated February 19, 2017