Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Redox-Active Molecular Nanowire Flash Memory for High-Endurance and High-Density Non-Volatile Memory Applications

Published

Author(s)

Hao Zhu, Sujitra J. Pookpanratana, John E. Bonevich, Sean Natoli, Christina A. Hacker, Tong Ren, John S. Suehle, Curt A. Richter, Qiliang Li
Citation
Advanced Materials
Volume
7
Issue
49

Citation

Zhu, H. , Pookpanratana, S. , Bonevich, J. , Natoli, S. , Hacker, C. , Ren, T. , Suehle, J. , Richter, C. and Li, Q. (2015), Redox-Active Molecular Nanowire Flash Memory for High-Endurance and High-Density Non-Volatile Memory Applications, Advanced Materials, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=918627 (Accessed December 9, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created December 16, 2015, Updated February 19, 2017