Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Rapid Detection of Thin-Film Interfacial Reactions by MEMS-DSC



Lawrence P. Cook, Richard E. Cavicchi, Yanbao Zhang, Mark D. Vaudin, Christopher B. Montgomery, William F. Egelhoff Jr., Martin L. Green, Leslie Allen


A MEMS-based differential scanning calorimeter (DSC) has been used to characterize the Ni/Si interfacial reaction in thin films at ramp rates of 940 C/s and 3760 C/s. The DSC devices were fabricated using CMOS semiconductor processing technology, and were calibrated for temperature and enthalpy using melting of pure metals. Experiments were conducted on both bilayer and multilayer Ni/Si thin film sequences of 200 nm total thickness. Reaction was observed to initiate at 250 C, and progressed rapidly with rising temperature. Reaction times were typically 0.1 s to 0.2 s. Observed reaction enthalpies were consistent with formation of Ni2Si or NiSi at the interface. In the multilayers, evidence for formation of both phases, with separate maxima in the DSC signal, was observed. The potential of the MEMS-DSC approach for combinatorial screening of interfacial stabilities is discussed.
Applied Physics Letters


DSC, interfacial reaction, MEMS, nanocalorimetry, thin film


Cook, L. , Cavicchi, R. , Zhang, Y. , Vaudin, M. , Montgomery, C. , Egelhoff Jr., W. , Green, M. and Allen, L. (2017), Rapid Detection of Thin-Film Interfacial Reactions by MEMS-DSC, Applied Physics Letters (Accessed July 23, 2024)


If you have any questions about this publication or are having problems accessing it, please contact

Created February 19, 2017