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Radiation Studies of Spin-transfer Torque Materials and Devices



H. L. Hughes, Konrad Bussmann, Shu-Fan Cheng, Robert D. Shull, Andrew P. Chen, S. Schafer, T. Mewes, A. Ong, E. N. Chen


Spin-transfer torque film stacks and devices having in-plane magnetization were irradiated using a cobalt-60 gamma source. The film stacks have a biased, synthetic antiferromagnet spin-valve architecture. Measurements of magnetization vs. field, ferromagnetic resonance, and tunnel magnetoresistance were performed on the film stacks before and after irradiation to 10 Mrad(Si) and no changes were observed in the associated material properties. Spin-transfer torque devices show tunnel magnetoresistance > 75% with no changes in bit-state or write performance to a total dose of 1 Mrad(Si).
IEEE Transactions on Nuclear Science


Magnetic tunnel junction, nonvolatile memory, spin-transfer torque


Hughes, H. , Bussmann, K. , Cheng, S. , Shull, R. , Chen, A. , Schafer, S. , Mewes, T. , Ong, A. and Chen, E. (2013), Radiation Studies of Spin-transfer Torque Materials and Devices, IEEE Transactions on Nuclear Science (Accessed June 25, 2024)


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Created August 14, 2013, Updated October 12, 2021