Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Radiation Studies of Spin-transfer Torque Materials and Devices

Published

Author(s)

H. L. Hughes, Konrad Bussmann, Shu-Fan Cheng, Robert D. Shull, Andrew P. Chen, S. Schafer, T. Mewes, A. Ong, E. N. Chen

Abstract

Spin-transfer torque film stacks and devices having in-plane magnetization were irradiated using a cobalt-60 gamma source. The film stacks have a biased, synthetic antiferromagnet spin-valve architecture. Measurements of magnetization vs. field, ferromagnetic resonance, and tunnel magnetoresistance were performed on the film stacks before and after irradiation to 10 Mrad(Si) and no changes were observed in the associated material properties. Spin-transfer torque devices show tunnel magnetoresistance > 75% with no changes in bit-state or write performance to a total dose of 1 Mrad(Si).
Citation
IEEE Transactions on Nuclear Science

Keywords

Magnetic tunnel junction, nonvolatile memory, spin-transfer torque

Citation

Hughes, H. , Bussmann, K. , Cheng, S. , Shull, R. , Chen, A. , Schafer, S. , Mewes, T. , Ong, A. and Chen, E. (2013), Radiation Studies of Spin-transfer Torque Materials and Devices, IEEE Transactions on Nuclear Science (Accessed June 25, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created August 14, 2013, Updated October 12, 2021